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| NTMD4884NF Power MOSFET and Schottky Diode Features 30 V, 5.7 A, Single N-Channel with 30 V, 2.8 A, Schottky Barrier Diode * FETKYt Surface Mount Package Saves Board Space * Independent Pin-Out for MOSFET and Schottky Allowing for * * * Design Flexibility Low RDS(on) MOSFET and Low VF Schottky to Minimize Conduction Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb-Free Device V(BR)DSS 30 V 70 mW @ 4.5 V http://onsemi.com N-CHANNEL MOSFET RDS(on) Max 48 mW @ 10 V 5.7 A ID Max Applications * Disk Drives * DC-DC Converters * Printers MOSFET MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Rating Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJA t < 10 s (Note 1) Power Dissipation RqJA t < 10 s (Note 1) Pulsed Drain Current TA = 25C TA = 70C TA = 25C TA = 25C Steady State TA = 70C TA = 25C TA = 25C TA = 70C TA = 25C TA = 25C, tp = 10 ms PD IDM TJ, TSTG IS TL PD ID PD ID Symbol VDSS VGS ID Value 30 20 4.7 3.8 1.6 3.3 2.6 0.77 5.7 4.5 2.3 19 -55 to +150 1.3 260 W A C A C W A W A Unit V V A SCHOTTKY DIODE VR Max 30 V VF Max 0.5 V IF Max 2.8 A S A G D N-Channel MOSFET C Schottky Diode MARKING DIAGRAM & PIN ASSIGNMENT CCDD 8 8 1 SOIC-8 CASE 751 STYLE 18 1 AASG 4884NF AYWW G Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) 4884NF = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package SCHOTTKY MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current, (Note 1) Steady State t < 10 s VRRM VR IF 30 30 2.8 4.1 V V A NTMD4884NFR2G SOIC-8 2500/Tape & Reel (Pb-Free) ORDERING INFORMATION Device Package Shipping For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2008 1 March, 2008 - Rev. 0 Publication Order Number: NTMD4884NF/D NTMD4884NF THERMAL RESISTANCE MAXIMUM RATINGS Parameter MOSFET & Schottky Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t 10 s Steady State (Note 1) Junction-to-FOOT (Drain) Equivalent to RqJC Junction-to-Ambient - Steady State (Note 2) 1. Surface-mounted on FR4 board using 1 inch sq pad size, 1 oz Cu. 2. Surface-mounted on FR4 board using the minimum recommended pad size. Symbol RqJA RqJA RqJF RqJA Max 79 54 50 163 C/W Unit ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance Forward Transconductance Gate Resistance VGS(TH) VGS(TH)/TJ RDS(on) gFS RG VGS = 10 V VGS = 4.5 V ID = 4.0 A ID = 3.5 A VGS = VDS, ID = 250 mA 1.0 5.0 34 50 10 2.4 3.6 48 70 2.5 V mV/C mW S W V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, VDS = 24 V TJ = 25C TJ = 125C VGS = 0 V, ID = 250 mA 30 24 1.0 20 100 V mV/C mA nA Symbol Test Condition Min Typ Max Unit VDS = 0 V, VGS = 20 V VDS = 5.0 V, ID = 4.0 A CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-TO-SOURCE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Time VSD tRR ta tb QRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 4.0 A VGS = 0 V ID = 1.3 A TJ = 25C TJ = 125C 0.8 0.65 9.2 6.0 3.2 3.3 nC 20 ns 1.0 V td(ON) tr td(OFF) tf VGS = 10 V, VDS = 15 V, ID = 1.0 A, RG = 6.0 W 6.0 6.5 14 1.4 12 13 26 7.0 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD QG(TOT) VGS = 10 V, VDS = 15 V, ID = 4.0 A VGS = 4.5 V, VDS = 15 V, ID = 4.0 A 280 VGS = 0 V, f = 1.0 MHz, VDS = 15 V 60 32 2.8 0.4 1.2 1.0 5.6 8.0 nC 360 80 42 4.2 nC pF http://onsemi.com 2 NTMD4884NF ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic Symbol Test Condition Min Typ Max Unit SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter Maximum Instantaneous Forward Voltage Symbol VF Test Conditions IF = 0.1 A IF = 2.0 A Maximum Instantaneous Reverse Current IR VR = 10 V TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C Min Typ 0.26 0.11 0.4 0.35 0.020 10 Max 0.28 0.13 0.50 0.46 0.25 37 mA Unit V 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. TYPICAL CHARACTERISTICS 15 10 V 5V ID, DRAIN CURRENT (A) 12 VGS = 4.0 V 4.2 V 4.5 V TJ = 25C 15 3.8 V ID, DRAIN CURRENT (A) 12 VDS 10 V 3.6 V 9 3.4 V 6 3.2 V 3 0 0 1 2 3 2.6 V 4 3.0 V 2.8 V 9 6 TJ = 125C TJ = 25C TJ = -55C 0 1 2 3 4 5 VGS, GATE-TO-SOURCE VOLTAGE (V) 3 0 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.08 0.07 0.06 0.05 0.04 0.03 0.02 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (V) ID = 4 A TJ = 25C 0.06 Figure 2. Transfer Characteristics TJ = 25C VGS = 4.5 V 0.05 0.04 VGS = 10 V 0.03 0.02 2 3 4 5 6 7 8 9 10 11 12 13 14 15 ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Gate Voltage Figure 4. On-Resistance vs. Drain Current and Gate Voltage http://onsemi.com 3 NTMD4884NF TYPICAL CHARACTERISTICS 1.500 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.375 1.250 1.125 1.000 0.875 0.750 -50 10 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) ID = 4 A VGS = 10 V IDSS, LEAKAGE (nA) 1000 10,000 VGS = 0 V TJ = 150C TJ = 125C 100 Figure 5. On-Resistance Variation with Temperature VGS, GATE-TO-SOURCE VOLTAGE (V) 350 TJ = 25C 300 C, CAPACITANCE (pF) Ciss 250 200 150 100 50 0 0 VGS = 0 V 5 10 15 20 DRAIN-TO-SOURCE VOLTAGE (V) Coss Crss 25 10 Figure 6. Drain-to-Source Leakage Current vs. Voltage QT VGS 8 6 Q1 Q2 4 2 0 0 1 2 3 4 ID = 4 A TJ = 25C 5 6 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 100 IS, SOURCE CURRENT (A) VDD = 15 V ID = 1.0 A VGS = 10 V t, TIME (ns) 10 td(off) tf td(on) tr 1 3.0 2.5 2.0 1.5 1.0 0.5 0 1 10 RG, GATE RESISTANCE (W) 100 0 Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge VGS = 0 V TJ = 25C 0.1 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTMD4884NF TYPICAL CHARACTERISTICS 1000 0.5 0.2 0.1 0.05 0.02 0.01 100 R(t) (C/W) 10 1 0.1 0.01 Single Pulse 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 11. Thermal Response - RqJA at Steady State (min pad) 100 0.5 R(t) (C/W) 0.2 10 0.1 0.05 0.02 1 0.01 0.1 Single Pulse 0.01 0.001 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 12. Thermal Response - RqJA at Steady State (1 inch sq pad) IF, INSTANTANEOUS FORWARD CURRENT (A) 100 IF, INSTANTANEOUS FORWARD CURRENT (A) 100 10 TJ = 125C 1 TJ = 85C TJ = 25C 0.1 0.1 0.3 TJ = -55C 0.5 0.7 0.9 1.1 1.3 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 10 TJ = 125C 1 TJ = 85C TJ = 25C 0.1 0.1 0.3 0.5 0.7 0.9 1.1 1.3 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V) Figure 13. Typical Forward Voltage Figure 14. Maximum Forward Voltage http://onsemi.com 5 NTMD4884NF TYPICAL CHARACTERISTICS IR, MAXIMUM REVERSE CURRENT (A) 100E-3 IR, REVERSE CURRENT (A) TJ = 125C 10E-3 TJ = 85C 1E-3 100E-3 TJ = 125C 10E-3 TJ = 85C 1E-3 100E-6 TJ = 25C 10E-6 1E-6 0 10 20 VR, REVERSE VOLTAGE (V) 100E-6 TJ = 25C 10E-6 1E-6 0 10 20 30 VR, REVERSE VOLTAGE (V) 30 Figure 15. Typical Reverse Current 1000 Figure 16. Maximum Reverse Current TJ = 25C C, CAPACITANCE (pF) 100 10 0 5 10 15 20 25 30 35 VR, REVERSE VOLTAGE (V) Figure 17. Capacitance http://onsemi.com 6 NTMD4884NF PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 ISSUE AH -XA 8 5 B 1 4 S 0.25 (0.010) M Y M -YG C -ZH D 0.25 (0.010) M SEATING PLANE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244 N X 45 _ 0.10 (0.004) M ZY S J X S DIM A B C D G H J K M N S SOLDERING FOOTPRINT* 1.52 0.060 STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. FETKY is a registered trademark of International Rectifier Corporation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P Box 5163, Denver, Colorado 80217 USA .O. Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 7 NTMD4884NF/D |
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